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PDF 2SC2209 Data sheet ( Hoja de datos )

Número de pieza 2SC2209
Descripción Silicon NPN epitaxial planar type
Fabricantes Panasonic Semiconductor 
Logotipo Panasonic Semiconductor Logotipo



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Power Transistors
2SC2209
Silicon NPN epitaxial planar type
For low-frequency power amplification
Complementary to 2SA0963
Features
Large collector power dissipation PC
Output of 5 W can be obtained by a complementary pair with
2SA0963
120°
7.5+–00..15
Unit: mm
2.9±0.2
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation *
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
50
40
5
1.5
3
10
150
55 to +150
Note) *: TC = 25°C
Unit
V
V
V
A
A
W
°C
°C
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
123
0.5±0.1
1.26±0.1
1: Emitter
2: Collector
3: Base
TO-126A-A1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *1, 2
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
VCBO
VCEO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
IC = 1 mA, IE = 0
IC = 2 mA, IB = 0
VCB = 20 V, IE = 0
VCE = 10 V, IB = 0
VEB = 5 V, IC = 0
VCE = 5 V, IC = 1 A
IC = 1.5 A, IB = 0.15 A
IC = 2 A, IB = 0.2 A
VCB = 5 V, IE = − 0.5 A, f = 200 MHz
VCB = 5 V, IE = 0, f = 1 MHz
Min Typ Max Unit
50 V
40 V
1 µA
100 µA
10 µA
80 220
1V
1.5 V
150 MHz
50 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
hFE
80 to 160
120 to 220
Publication date: January 2003
SJD00097BED
1

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