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PDF TF250TH Data sheet ( Hoja de datos )
| Número de pieza | TF250TH | |
| Descripción | N-channel Silicon Junction FET | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Ordering number : ENA0381
TF250TH
SANYO Semiconductors
DATA SHEET
TF250TH
N-channel Silicon Junction FET
Electret Condenser Microphone
Applications
Features
• Ultrasmall package facilitates miniaturization in end products.
• Especially suited for use in electret condenser microphone for audio equipments and telephones.
• Excellent voltage characteristics.
• Excellent transient characteristics.
• Adoption of FBET process.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VGDO
IG
ID
PD
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Gate-to-Drain Breakdown Voltage
Cutoff Voltage
Zero-Gate Voltage Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Marking: C
Symbol
Conditions
V(BR)GDO
VGS(off)
IDSS
yfs
Ciss
Crss
IG=--100µA
VDS=2V, ID=1µA
VDS=2V, VGS=0V
VDS=2V, VGS=0V, f=1kHz
VDS=2V, VGS=0V, f=1MHz
VDS=2V, VGS=0V, f=1MHz
* : The TF250TH is classified by IDSS as follows : (unit : µA)
Rank
4
5
IDSS
140 to 240
210 to 350
Ratings
--20
10
1
100
150
--55 to +150
Unit
V
mA
mA
mW
°C
°C
min
--20
--0.1
140*
0.7
Ratings
typ
max
Unit
V
--0.4 --1.0 V
350* µA
1.3 mS
2.8 pF
0.55
pF
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82506GB MS IM TC-00000099 No. A0381-1/4
Datasheet pdf - http://www.DataSheet4U.net/
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| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet TF250TH.PDF ] | |
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