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Número de pieza | 2SC2149 | |
Descripción | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR | |
Fabricantes | NEC | |
Logotipo | ||
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No Preview Available ! DATA SHEET
SILICON TRANSISTORS
2SC2148, 2SC2149
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC2148, 2SC2149 are economical microwave transistors
encapsulated into new hermetic stripline packages, "micro X".
These are designed for small signal amplifier, low noise amplifier,
and oscillator applications in the L to C band, and CML circuit use.
FEATURES
2SC2148 NF: 2.1 dB TYP. @f = 500 MHz
2SC2149 NF: 2.6 dB TYP. @f = 2.0 GHz
PACKAGE DIMENSIONS
(Unit : mm)
1
4.0 MIN.
2
4.0 MIN.
4
45°
3
0.5±0.05
2.55±0.2
φ 2.1
1. Emitter
2. Collector
3. Emitter
4. Base
Derating curves of the 2SC2148, 2SC2149.
The maximum junction temperature of these transistors is allowed up to 200 °C, but the ambient or storage
temperature is limitted to 150 °C. The operating junction temperature is estimated with power consumption (PT) and
thermal resistance mentioned on these derating curves.
The information in this document is subject to change without notice.
Document No. P11809EJ2V0DS00 (2nd edition)
(Previous No. TC-1428)
Date Published August 1996 P
Printed in Japan
©
1981
1 page 2SC2148, 2SC2149
2SC2149
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage
VCBO
Collector to Emitter Voltage VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PT(TA = 25 °C)
Total Power Dissipation
PT(Tc = 140 °C)
Junction Temperature
Tj
Storage Temperature
Tstg
25
12
3.0
70
290
500
200
−65 to +150
V
V
V
mA
mW
mW
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Output Capacitance *
Insertion Gain
Noise Figure
Maximum Available Gain
SYMBOL
ICBO
IEBO
hFE
fT
Cob
MIN.
30
S21e2
5.0
NF
MAG
TYP.
70
5.0
0.6
12.7
6.7
1.7
2.6
17
11
MAX.
0.1
0.1
200
4.0
UNIT
µA
µA
GHz
pF
dB
dB
dB
dB
dB
dB
TEST CONDITIONS
VCB = 15 V, IE = 0
VEB = 2.0 V, IC = 0
VCE = 10 V, IC = 20 mA
VCE = 10 V, IC = 20 mA
VCB = 10 V, IE = 0, f = 1.0 MHz
VCE = 10 V, IC = 20 mA
f = 1.0 GHz
f = 2.0 GHz
f = 1.0 GHz
VCE = 10 V, IC = 5.0 mA
f = 2.0 GHz
VCE = 10 V, IC = 20 mA
f = 1.0 GHz
f = 2.0 GHz
* The emitter terminal should be connected to the guard terminal of the three-terminal capacitance bridge.
TYPICAL CHARACTERISTICS (TA = 25 °C)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
VCE = 10 V
100
50
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
70
50 VCE = 10 V
20
10
5
20
10
0.5
1
5 10
IC−Collector Current−mA
50 70
2
1
0.5
0.5
0.6 0.7 0.8
VBE−Base to Emitter Voltage−V
0.9
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet 2SC2149.PDF ] |
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