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PDF 2SC2120 Data sheet ( Hoja de datos )
| Número de pieza | 2SC2120 | |
| Descripción | TRANSISTOR (AUDIO POWER AMPLIFIER APPLICATIONS) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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1. 2SC2120  Hay una vista previa y un enlace de descarga de 2SC2120 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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1112SC2120
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2120
Audio Power Amplifier Applications
Unit: mm
• High hFE: hFE (1) = 100~320
• 1 watts amplifier applications.
• Complementary to 2SA950
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
35
30
5
800
160
600
150
−55~150
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 35 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 10 mA, IB = 0
hFE (1)
VCE = 1 V, IC = 100 mA
(Note)
hFE (2) VCE = 1 V, IC = 700 mA
VCE (sat) IC = 500 mA, IB = 20 mA
VBE VCE = 1 V, IC = 10 mA
fT VCE = 5 V, IC = 10 mA
Cob VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE (1) classification O: 100~200, Y: 160~320
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
Min Typ. Max Unit
0.1 µA
0.1 µA
30
V
100 320
35
0.5 V
0.5 0.8 V
120 MHz
13 pF
1 2005-08-02
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC2120.PDF ] | |
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