DataSheet.es    


PDF 2SC1927 Data sheet ( Hoja de datos )

Número de pieza 2SC1927
Descripción NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE
Fabricantes NEC 
Logotipo NEC Logotipo



Hay una vista previa y un enlace de descarga de 2SC1927 (archivo pdf) en la parte inferior de esta página.


Total 4 Páginas

No Preview Available ! 2SC1927 Hoja de datos, Descripción, Manual

DATA SHEET
SILICON TRANSISTOR
2SC1927
NPN SILICON EPITAXIAL DUAL TRANSISTOR
FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING
INDUSTRIAL USE
DESCRIPTION
The 2SC1927 is an NPN silicon epitaxial dual transistor that
consists of two chips equivalent to the 2SC1275, and is designed for
differential amplifier and ultra-high-speed switching applications.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL RATINGS UNIT
VCBO 30 V
VCEO 14 V
VEBO
3.0 V
IC 50 mA
PC 200 mW/unit
PT 300 mW
Tj 200 ˚C
Tstg –65 to +200 ˚C
PACKAGE DIMENSIONS
(in millimeters)
5.0 MIN.
3.5
+0.3
–0.2
5.0 MIN.
43
52
61
PIN CONNECTIONS
4
1C
3
2C
61
1B 2B
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
hFE Ratio
Difference of Base to Emitter Voltage
Gain Bandwidth Product
Output Capacitance
SYMBOL
ICES
IEBO
hFE
hFE1/hFE2
VBE
fT
Cob
TEST CONDITIONS
VCE = 15 V, RBE = 0
VEB = 2.0 V, IC = 0
VCE = 10 V, IC = 10 mA
VCE = 10 V, IC = 10 mA *1
VCE = 10 V, IC = 10 mA
VCE = 10 V, IC = 10 mA *2
VCB = 10 V, IE = 0, f = 1.0 MHz *3
MIN.
25
0.8
1.5
52
1E 2E
TYP. MAX.
50
50
80 200
1.0
30
2.0
1.1 1.5
UNIT
nA
nA
mV
GHz
pF
* 1. hFE1 is the smaller hFE value of the 2 transistors.
2. Sampling check shall be done on a production lot base using a TO-18 packaged device (equivalent to the
2SC1275).
3. Measured with a 3-terminal bridge, terminals other than the collector and base of the device under test should
be connected to the guard terminal of the bridge.
Document No. P11671EJ1V0DS00 (1st edition)
Date Published July 1996 P
Printed in Japan
© 1996

1 page





PáginasTotal 4 Páginas
PDF Descargar[ Datasheet 2SC1927.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
2SC1921Silicon NPN Triple DiffusedHitachi Semiconductor
Hitachi Semiconductor
2SC1921Silicon NPN Triple DiffusedRenesas
Renesas
2SC1922NPN TransistorsContinental Device India
Continental Device India
2SC1922SILICON POWER TRANSISTORSavantIC
SavantIC

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar