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PDF K25N120 Data sheet ( Hoja de datos )
| Número de pieza | K25N120 | |
| Descripción | Fast IGBT in NPT-technology | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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SKW25N120
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• 40lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
- SMPS
G
• NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
E
PG-TO-247-3
Type
SKW25N120
VCE
1200V
IC
25A
Eoff
2.9mJ
Tj
150°C
Marking Package
K25N120 PG-TO-247-3
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2
VGE = 15V, 100V≤VCC ≤1200V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature,
wavesoldering, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj , Tstg
Ts
Value
1200
46
25
84
84
Unit
V
A
42
25
80
±20
10
313
-55...+150
260
V
µs
W
°C
1 J-STD-020 and JESD-022
2 Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2_2 Sep 08
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
SKW25N120
80A
70A
60A
VGE=17V
50A 15V
13V
40A 11V
9V
30A 7V
20A
10A
0A
0V 1V 2V 3V 4V 5V 6V 7V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
80A
70A
60A
50A
VGE=17V
15V
13V
40A 11V
9V
30A 7V
20A
10A
0A
0V 1V 2V 3V 4V 5V 6V 7V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150°C)
80A
70A
60A
50A
Tj=+150°C
40A Tj=+25°C
30A Tj=-40°C
20A
10A
0A
3V 4V 5V 6V 7V 8V 9V 10V 11V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 20V)
6V
5V
IC=50A
4V
3V IC=25A
IC=12.5A
2V
1V
0V
-50°C
0°C
50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
Power Semiconductors
5
Rev. 2_2 Sep 08
Datasheet pdf - http://www.DataSheet4U.net/
5 Page 
www.DataSheet.co.kr
SKW25N120
PG-TO247-3
M
M
MIN MAX
4.90 5.16
2.27 2.53
1.85 2.11
1.07 1.33
1.90 2.41
1.90 2.16
2.87 3.38
2.87 3.13
0.55 0.68
20.82
21.10
16.25
17.65
1.05 1.35
15.70
16.03
13.10
14.15
3.68 5.10
1.68 2.60
5.44
3
19.80
20.31
4.17 4.47
3.50 3.70
5.49 6.00
6.04 6.30
MIN
0.193
0.089
0.073
0.042
0.075
0.075
0.113
0.113
0.022
0.820
0.640
0.041
0.618
0.516
0.145
0.066
0.780
0.164
0.138
0.216
0.238
0.214
3
MAX
0.203
0.099
0.083
0.052
0.095
0.085
0.133
0.123
0.027
0.831
0.695
0.053
0.631
0.557
0.201
0.102
0.799
0.176
0.146
0.236
0.248
Power Semiconductors
11
Z8B00003327
0
0 55
7.5mm
17-12-2007
03
Rev. 2_2 Sep 08
Datasheet pdf - http://www.DataSheet4U.net/
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet K25N120.PDF ] | |
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