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PDF 2SC1568 Data sheet ( Hoja de datos )
| Número de pieza | 2SC1568 | |
| Descripción | Silicon NPN epitaxial planar type | |
| Fabricantes | Panasonic Semiconductor | |
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Power Transistors
2SC1568
Silicon NPN epitaxial planar type
For low-voltage type medium output power amplification
Complementary to 2SA0900
■ Features
• Low collector-emitter saturation voltage VCE(sat)
• Satisfactory operation performances and high efficiency with a low-
voltage power supply
• TO-126B package which incorporates a unique construction en-
abling installation to the heat sink without using insulation parts
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
18
18
5
1
2
1.2
150
−55 to +150
Unit
V
V
V
A
A
W
°C
°C
φ 3.16±0.1
8.0+–00..15
Unit: mm
3.2±0.2
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
0.5±0.1
1.76±0.1
123
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 18 V
Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
18 V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 V
Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0
1 µA
Collector-emitter cutoff current (Base open) ICEO VCE = 18 V, IB = 0
10 µA
Forward current transfer ratio
hFE1 * VCE = 2 V, IC = 500 mA
90 280
hFE2 VCE = 2 V, IC = 1.5 A
50 100
Collector-emitter saturation voltage
VCE(sat) IC = 1 A, IB = 50 mA
0.5 V
Base-emitter saturation voltage
VBE(sat) IC = 500 mA, IB = 50 mA
1.2 V
Transition frequency
fT VCB = 6 V, IE = −50 mA, f = 200 MHz 150 MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 6 V, IE = 0, f = 1 MHz
12 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
hFE1
90 to 155
130 to 210 180 to 280
Publication date: January 2003
SJD00093BED
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SC1568.PDF ] | |
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