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PDF 2SC1509 Data sheet ( Hoja de datos )

Número de pieza 2SC1509
Descripción Silicon NPN epitaxial planer type(For low-frequency driver amplification)
Fabricantes Panasonic Semiconductor 
Logotipo Panasonic Semiconductor Logotipo



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No Preview Available ! 2SC1509 Hoja de datos, Descripción, Manual

Transistor
2SC1509
Silicon NPN epitaxial planer type
For low-frequency driver amplification
Complementary to 2SA777
s Features
q High collector to emitter voltage VCEO.
q Optimum for the driver stage of a low-frequency and 25 to 30W
output amplifier.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
80
80
5
1
0.5
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
5.9±0.2
Unit: mm
4.9±0.2
0.7±0.1
2.54±0.15
0.45+–00..21
1.27
1.27
123
0.45+–00..21
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
ICBO
VCBO
VCEO
VEBO
hFE1*1
hFE2
VCE(sat)
VBE(sat)
VCB = 20V, IE = 0
IC = 10µA, IE = 0
IC = 100µA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 150mA*2
VCE = 5V, IC = 500mA*2
IC = 300mA, IB = 30mA*2
IC = 300mA, IB = 30mA*2
0.1
80
80
5
130 330
50 100
0.2 0.4
0.85 1.2
µA
V
V
V
V
V
Transition frequency
fT VCB = 10V, IE = –50mA, f = 100MHz
120 MHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
11 20 pF
*2 Pulse measurement
*1hFE1 Rank classification
Rank
R
S
hFE1 130 ~ 220 185 ~ 330
1

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