PDF EMH2604 Data sheet ( Hoja de datos )

Número de pieza	EMH2604
Descripción	N-Channel and P-Channel Silicon MOSFETs
Fabricantes	Sanyo Semicon Device
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No Preview Available ! www.DataSheet.co.kr Ordering number : EN9006 EMH2604 SANYO Semiconductors DATA SHEET EMH2604 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • Nch + Pch MOSFET • ON-resistance Nch : RDS(on)1=34mΩ(typ.) Pch : RDS(on)1=65mΩ(typ.) • 1.8V drive • Halogen free compliance Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) N-channel P-channel 20 --20 ±10 ±10 4 --3 20 --20 1.0 1.2 150 --55 to +150 Unit V V A A W W °C °C Package Dimensions unit : mm (typ) 7045-002 0.2 8 5 0.125 Product & Package Information • Package : EMH8 • JEITA, JEDEC :- • Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking 1 0.5 2.0 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : EMH8 FD TL LOT No. Electrical Connection 8765 1234 http://semicon.sanyo.com/en/network 60111PE TKIM TC-00002607 No.9006-1/6 Datasheet pdf - http://www.DataSheet4U.net/ 1 page www.DataSheet.co.kr EMH2604 240 RDS(on) -- VGS [Pch] Ta=25°C 210 180 ID= --0.5A 150 120 90 --1A --3A 60 30 0 0 --1 --2 --3 --4 --5 --6 --7 --8 10 Gate-to-Source \| yfs V\| ol-t-ageID, VGS -- V IT14535 [Pch] 7 VDS= --10V 5 3 2 Ta= --25°C 75°C 1.0 7 25°C 5 3 2 0.1 --0.01 2 3 5 3 2 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 Drain Current, SW Time I-D- -- A ID IT14537 [Pch] VDD= --10V VGS= --4.5V 100 7 5 td(off) 3 2 tf 10 7 td(on) tr 5 3 2 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 --4.5 VDS= --10V --4.0 ID= --3A Drain Current, VGS -- IQDg-- A 23 5 7 --10 IT14539 [Pch] --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Total Gate Charge, Qg -- nC IT14541 RDS(on) -- Ta [Pch] 240 220 200 180 160 VGS= --1.8V, ID= --0.5A 140 120 100 80 60 VVGGSS==----24..55VV,,IIDD==----13.0.0AA 40 20 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT14536 7 IS -- VSD [Pch] 5 VGS=0V 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 --0.3 7 5 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 Diode Ciss, Forward Voltage, Coss, Crss V-S-D -- V VDS IT14538 [Pch] f=1MHz Ciss 3 2 100 7 Coss 5 Crss 3 2 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 --100 7 5 Drain-to-Source A Voltage, SO VDS -- V IT14540 [Pch] 3 2 IDP= --20A (PW≤10μs) --10 7 5 3 ID= --3A 2 --1.0 7 5 3 2 1m1s00μs DC 100m1s0ms operation Operation in this --0.1 7 area is limited by RDS(on). 5 3 Ta=25°C 2 Single pulse --0.01 When mounted on ceramic substrate (900mm2×0.8mm) --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7--10 2 3 5 7--100 Drain-to-Source Voltage, VDS -- V IT16455 No.9006-5/6 Datasheet pdf - http://www.DataSheet4U.net/ 5 Page

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