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PDF 2SC1359 Data sheet ( Hoja de datos )
| Número de pieza | 2SC1359 | |
| Descripción | Silicon NPN epitaxial planer type(For high-frequency amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SC1359 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Transistor
2SC1359
Silicon NPN epitaxial planer type
For high-frequency amplification
Complementary to 2SA838
s Features
q Optimum for RF amplification of FM/AM radios.
q High transition frequency fT.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
30
20
5
30
400
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
5.0±0.2
Unit: mm
4.0±0.2
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Forward current transfer ratio
ICBO
hFE*
VCB = 10V, IE = 0
VCB = 10V, IE = –1mA
0.1 µA
70 220
Transition frequency
fT
VCB = 10V, IE = –1mA, f = 200MHz 150
250
MHz
Noise figure
Reverse transfer impedance
NF
Zrb
VCB = 10V, IE = –1mA, f = 5MHz
VCB = 10V, IE = –1mA, f = 2MHz
2.8 4 dB
22 50 Ω
Common emitter reverse transfer capacitance Cre
VCE = 10V, IC = 1mA, f = 10.7MHz
0.9 1.5 pF
*hFE Rank classification
Rank
B
hFE 70 ~ 140
C
110 ~ 220
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC1359.PDF ] | |
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