(PDF) 2SC1251 Datasheet - NPN SILICON RF POWER TRANSISTOR

Número de pieza	2SC1251
Descripción	NPN SILICON RF POWER TRANSISTOR
Fabricantes	Advanced Semiconductor
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No Preview Available ! 2SC1251 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The 2SC1251 is a Common Emitter Device Designed for High Linearity Class A Amplifiers up to 2.0 GHz. FEATURES INCLUDE: • Direct Replacement for NE74020 • High Gain - 10 dB min. @ 1.0 GHz • Gold Metalization MAXIMUM RATINGS IC 300 mA VCB PDISS TJ TSTG θJC 45 V 5.3W @ TC = 25 OC -65 OC to +200 OC -65 OC to +150 OC 33 OC/W PACKAGE STYLE .204 4L STUD 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS BVCEO IC = 10 mA BVCBO IC = 10 mA BVEBO IE = 1.0 mA hFE VCE = 5.0 V IC = 100 mA MINIMUM TYPICAL MAXIMUM 25 45 3.0 20 200 UNITS V V V --- COB VCB = 15 V f = 1.0 MHz 3.0 pF PG P1dB VCE = 15 V IC = 100 mA POUT = 0.5 W f = 1000 MHz 13 +27 +29 dB dBm A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/2 1 page

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PDF 2SC1251 Data sheet ( Hoja de datos )