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PDF 2SB976 Data sheet ( Hoja de datos )
| Número de pieza | 2SB976 | |
| Descripción | Silicon PNP epitaxial planer type(For low-frequency output amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SB976 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Transistor
2SB976
Silicon PNP epitaxial planer type
For low-frequency output amplification
For DC-DC converter
For stroboscope
s Features
q Low collector to emitter saturation voltage VCE(sat).
q Large collector current IC.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–27
–18
–7
–8
–5
0.75
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
5.0±0.2
Unit: mm
4.0±0.2
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
IEBO
VCEO
VEBO
hFE*1
VCE(sat)
fT
Cob
VCB = –10V, IE = 0
–100 nA
VEB = –5V, IC = 0
–1 µA
IC = –1mA, IB = 0
–18
V
IE = –10µA, IC = 0
–7
V
VCE = –2V, IC = –2A*2
125 625
IC = –3A, IB = –0.1A*2
– 0.4 –1
V
VCB = –6V, IE = 50mA, f = 200MHz 120 MHz
VCB = –20V, IE = 0, f = 1MHz
60 pF
*2 Pulse measurement
*1hFE Rank classification
Rank
Q
R
hFE 125 ~ 205 180 ~ 625
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SB976.PDF ] | |
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