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PDF 2SB956 Data sheet ( Hoja de datos )

Número de pieza 2SB956
Descripción Silicon PNP epitaxial planer type(For low-frequency power amplification)
Fabricantes Panasonic Semiconductor 
Logotipo Panasonic Semiconductor Logotipo



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No Preview Available ! 2SB956 Hoja de datos, Descripción, Manual

Transistor
2SB956
Silicon PNP epitaxial planer type
For low-frequency power amplification
Complementary to 2SD1280
Unit: mm
s Features
q Large collector power dissipation PC.
q Low collector to emitter saturation voltage VCE(sat).
q Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–20
V
Collector to emitter voltage VCEO
–20
V
Emitter to base voltage
VEBO
–5
V
Peak collector current
ICP
–2 A
Collector current
IC
–1 A
Collector power dissipation PC* 1 W
Junction temperature
Tj
150 ˚C
Storage temperature
Tstg –55 ~ +150 ˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
4.5±0.1
1.6±0.2
1.5±0.1
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : H
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
VCEO
VEBO
hFE1*1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Conditions
VCB = –10V, IE = 0
IC = –1mA, IB = 0
IE = –10µA, IC = 0
VCE = –2V, IC = –500mA*2
VCE = –2V, IC = –1.5A*2
IC = –1A, IB = –50mA*2
IC = –500mA, IB = –50mA
VCB = –6V, IE = 50mA, f = 200MHz
VCB = –6V, IE = 0, f = 1MHz
min
–20
–5
130
50
*1hFE1 Rank classification
Rank
R
hFE1
Marking Symbol
130 ~ 210
HR
S
180 ~ 280
HS
typ max Unit
–1 µA
V
V
280
– 0.5
V
–1.2 V
200 MHz
40 pF
*2 Pulse measurement
1

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