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PDF 2SB954A Data sheet ( Hoja de datos )
| Número de pieza | 2SB954A | |
| Descripción | Silicon PNP epitaxial planar type(For power amplification) | |
| Fabricantes | Panasonic Semiconductor | |
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Power Transistors
2SB954, 2SB954A
Silicon PNP epitaxial planar type
For power amplification
s Features
q High forward current transfer ratio hFE which has satisfactory linearity
q Low collector to emitter saturation voltage VCE(sat)
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SB954
base voltage 2SB954A
VCBO
–60
–80
Collector to 2SB954
emitter voltage 2SB954A
VCEO
–60
–80
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
–5
–2
–1
30
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SB954
current
2SB954A
Collector cutoff
2SB954
current
2SB954A
Emitter cutoff current
Collector to emitter 2SB954
voltage
2SB954A
ICEO
ICES
IEBO
VCEO
VCE = –30V, IB = 0
VCE = –60V, IB = 0
VCE = –60V, VBE = 0
VCE = –80V, VBE = 0
VEB = –5V, IC = 0
IC = –30mA, IB = 0
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Turn-on time
Storage time
Fall time
hFE1*
hFE2
VCE(sat)
VBE
fT
ton
tstg
tf
VCE = –4V, IC = – 0.2A
VCE = –4V, IC = –1A
IC = –1A, IB = – 0.125A
VCE = –4V, IC = –1A
VCE = –5V, IC = – 0.2A, f = 10MHz
IC = –1A, IB1 = – 0.1A, IB2 = 0.1A,
VCC = –50V
*hFE1 Rank classification
Rank
Q
P
hFE1 70 to 150 120 to 250
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min typ max Unit
–300
–300
µA
–200
–200
µA
–1 mA
–60
V
–80
70 250
15
–1 V
–1.3 V
30 MHz
0.5 µs
1.2 µs
0.3 µs
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SB954A.PDF ] | |
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