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Número de pieza | 2SB953 | |
Descripción | Silicon PNP epitaxial planar type(For low-voltage switching) | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SB953 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! Power Transistors
2SB953, 2SB953A
Silicon PNP epitaxial planar type
For low-voltage switching
Complementary to 2SD1444 and 2SD1444A
s Features
q Low collector to emitter saturation voltage VCE(sat)
q High-speed switching
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SB953
base voltage 2SB953A
VCBO
–40
–50
Collector to 2SB953
emitter voltage 2SB953A
VCEO
–20
–40
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
–5
–12
–7
30
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SB953
current
2SB953A
Emitter cutoff current
Collector to emitter 2SB953
voltage
2SB953A
ICBO
IEBO
VCEO
VCB = –40V, IE = 0
VCB = –50V, IE = 0
VEB = –5V, IC = 0
IC = –10mA, IB = 0
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
hFE1
hFE2*
VCE(sat)
VBE(sat)
fT
Cob
ton
tstg
tf
VCE = –2V, IC = – 0.1A
VCE = –2V, IC = –2A
IC = –5A, IB = – 0.16A
IC = –5A, IB = – 0.16A
VCE = –10V, IC = – 0.5A, f = 10MHz
VCB = –10V, IE = 0, f = 1MHz
IC = –2A, IB1 = –66mA, IB2 = 66mA
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min typ max Unit
–50
µA
–50
–50 µA
–20
V
–40
45
90 260
– 0.6
V
–1.5 V
150 MHz
140 pF
0.1 µs
0.5 µs
0.1 µs
*hFE2 Rank classification
Rank
Q
P
hFE2 90 to 180 130 to 260
Note: Ordering can be made by the common rank (PQ rank hFE2 = 90 to 260) in the
rank classification.
1
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet 2SB953.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SB950 | Silicon PNP epitaxial planar type Darlington(For power amplification and switching) | Panasonic Semiconductor |
2SB950 | Power Transistors | Panasonic Semiconductor |
2SB950A | Silicon PNP epitaxial planar type Darlington(For power amplification and switching) | Panasonic Semiconductor |
2SB950A | Power Transistors | Panasonic Semiconductor |
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