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PDF 2SB951 Data sheet ( Hoja de datos )

Número de pieza 2SB951
Descripción Silicon PNP epitaxial planar type Darlington(For midium-speed switching)
Fabricantes Panasonic Semiconductor 
Logotipo Panasonic Semiconductor Logotipo



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Power Transistors
2SB951, 2SB951A
Silicon PNP epitaxial planar type Darlington
For midium-speed switching
Complementary to 2SD1277 and 2SD1277A
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
s Features
q High foward current transfer ratio hFE
q High-speed switching
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SB951
base voltage 2SB951A
VCBO
–60
–80
V
Collector to 2SB951
emitter voltage 2SB951A
VCEO
–60
–80
V
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
–7
–12
–8
45
2
V
A
A
W
Junction temperature
Storage temperature
Tj 150 ˚C
Tstg –55 to +150 ˚C
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
Internal Connection
C
B
E
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SB951
current
2SB951A
Emitter cutoff current
Collector to emitter 2SB951
voltage
2SB951A
ICBO
IEBO
VCEO
VCB = –60V, IE = 0
VCB = –80V, IE = 0
VEB = –7V, IC = 0
IC = –30mA, IB = 0
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
hFE1*
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCE = –3V, IC = –4A
VCE = –3V, IC = –8A
IC = –4A, IB = –8mA
IC = –4A, IB = –8mA
VCE = –10V, IC = –1A, f = 1MHz
IC = –4A, IB1 = –8mA, IB2 = 8mA,
VCC = –50V
min
–60
–80
2000
500
typ max Unit
–100
–100
µA
–2 mA
V
10000
–1.5 V
–2 V
20 MHz
0.5 µs
2 µs
1 µs
*hFE1 Rank classification
Rank
Q
P
hFE1 2000 to 5000 4000 to 10000
1

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