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PDF 2SB949 Data sheet ( Hoja de datos )

Número de pieza 2SB949
Descripción Silicon PNP epitaxial planar type Darlington
Fabricantes Panasonic Semiconductor 
Logotipo Panasonic Semiconductor Logotipo



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Power Transistors
2SB949, 2SB949A
Silicon PNP epitaxial planar type Darlington
For power amplification and switching
Complementary to 2SD1275 and 2SD1275A
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
s Features
q High foward current transfer ratio hFE
q High-speed switching
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SB949
base voltage 2SB949A
VCBO
–60
–80
V
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
Collector to 2SB949
emitter voltage 2SB949A
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
–60
–80
–5
–4
–2
35
2
150
–55 to +150
s Electrical Characteristics (TC=25˚C)
V
V
A
A
W
˚C
˚C
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
Internal Connection
C
B
E
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff
2SB949
current
2SB949A
Collector cutoff
2SB949
current
2SB949A
Emitter cutoff current
Collector to emitter 2SB949
voltage
2SB949A
ICBO
ICEO
IEBO
VCEO
VCB = –60V, IE = 0
VCB = –80V, IE = 0
VCB = –30V, IB = 0
VCB = –40V, IB = 0
VEB = –5V, IC = 0
IC = –30mA, IB = 0
–1
mA
–1
–2
mA
–2
–2 mA
–60
V
–80
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
hFE1
hFE2*
VBE
VCE(sat)
fT
ton
tstg
tf
VCE = –4V, IC = –1A
VCE = –4V, IC = –2A
VCE = –4V, IC = –2A
IC = –2A, IB = –8mA
VCE = –10V, IC = – 0.5A, f = 1MHz
IC = –2A, IB1 = –8mA, IB2 = 8mA,
VCC = –50V
1000
2000
10000
–2.8 V
–2.5 V
20 MHz
0.4 µs
1.5 µs
0.5 µs
*hFE2 Rank classification
Rank
Q
P
hFE2 2000 to 5000 4000 to 10000
1

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