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PDF 2SB948 Data sheet ( Hoja de datos )
| Número de pieza | 2SB948 | |
| Descripción | Silicon PNP Epitaxial Transistor | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Power Transistors
2SB948, 2SB948A
Silicon PNP epitaxial planar type
For low-voltage switching
Complementary to 2SD1445 and 2SD1445A
Unit: mm
s Features
q Low collector to emitter saturation voltage VCE(sat)
q High-speed switching
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SB948
base voltage 2SB948A
VCBO
–40
–50
V
Collector to 2SB948
emitter voltage 2SB948A
VCEO
–20
–40
V
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
–5
–20
–10
40
2
V
A
A
W
Junction temperature
Storage temperature
Tj 150 ˚C
Tstg –55 to +150 ˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter 2SB948
voltage
2SB948A
ICBO
IEBO
VCEO
VCB = –40V, IE = 0
VEB = –5V, IC = 0
IC = –10mA, IB = 0
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
hFE1
hFE2*
VCE(sat)
VBE(sat)
fT
Cob
ton
tstg
tf
VCE = –2V, IC = – 0.1A
VCE = –2V, IC = –3A
IC = –10A, IB = – 0.33A
IC = –10A, IB = – 0.33A
VCE = –10V, IC = – 0.5A, f = 10MHz
VCB = –10V, IE = 0, f = 1MHz
IC = –3A, IB1 = – 0.1A, IB2 = 0.1A
10.0±0.2
5.5±0.2
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min typ max Unit
–50 µA
–50 µA
–20
V
–40
45
90 260
– 0.6
V
–1.5 V
100 MHz
400 pF
0.1 µs
0.5 µs
0.1 µs
*hFE2 Rank classification
Rank
Q
P
hFE2 90 to 180 130 to 260
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SB948.PDF ] | |
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