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PDF 2SB947 Data sheet ( Hoja de datos )
| Número de pieza | 2SB947 | |
| Descripción | Silicon PNP epitaxial planar type(For low-voltage switching) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Power Transistors
2SB947, 2SB947A
Silicon PNP epitaxial planar type
For low-voltage switching
s Features
q Low collector to emitter saturation voltage VCE(sat)
q High-speed switching
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SB947
base voltage 2SB947A
VCBO
–40
–50
V
Collector to 2SB947
emitter voltage 2SB947A
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
–20
–40
–5
–15
–10
35
2
150
–55 to +150
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SB947
current
2SB947A
Emitter cutoff current
Collector to emitter 2SB947
voltage
2SB947A
ICBO
IEBO
VCEO
VCB = –40V, IE = 0
VCB = –50V, IE = 0
VEB = –5V, IC = 0
IC = –10mA, IB = 0
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
hFE1
hFE2*
VCE(sat)
VBE(sat)
fT
Cob
ton
tstg
tf
VCE = –2V, IC = – 0.1A
VCE = –2V, IC = –2A
IC = –7A, IB = – 0.23A
IC = –7A, IB = – 0.23A
VCE = –10V, IC = – 0.5A, f = 10MHz
VCB = –10V, IE = 0, f = 1MHz
IC = –2A, IB1 = –66mA, IB2 = 66mA
*hFE2 Rank classification
Rank
Q
P
hFE2 90 to 180 130 to 260
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min typ max Unit
–50
µA
–50
–50 µA
–20
V
–40
45
90 260
– 0.6
V
–1.5 V
150 MHz
200 pF
0.1 µs
0.5 µs
0.1 µs
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SB947.PDF ] | |
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