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PDF FDMB2307NZ Data sheet ( Hoja de datos )

Número de pieza FDMB2307NZ
Descripción Dual Common Drain N-Channel PowerTrench MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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FDMB2307NZ
October 2011
Dual Common Drain N-Channel PowerTrench® MOSFET
20 V, 9.7 A, 16.5 mΩ
Features
„ Max rS1S2(on) = 16.5 mΩ at VGS = 4.5 V, ID = 8 A
„ Max rS1S2(on) = 18 mΩ at VGS = 4.2 V, ID = 7.4 A
„ Max rS1S2(on) = 21 mΩ at VGS = 3.1 V, ID = 7 A
„ Max rS1S2(on) = 24 mΩ at VGS = 2.5 V, ID = 6.7 A
„ Low Profile - 0.8 mm maximum - in the new package
MicroFET 2x3 mm
„ HBM ESD protection level > 2 kV (Note 3)
„ RoHS Compliant
General Description
This device is designed specifically as a single package solution
for Li-Ion battery pack protection circuit and other ultra-portable
applications. It features two common drain N-channel
MOSFETs, which enables bidirectional current flow, on
Fairchild’s advanced PowerTrench® process with state of the art
MicroFET Leadframe, the FDMB2307NZ minimizes both PCB
space and rS1S2(on).
Application
„ Li-Ion Battery Pack
Pin 1
Pin 1
S1 S1 G1
D1/D2
G2 4
S2 5
S2 6
3 G1
2 S1
1 S1
S2 S2 G2
Top Bottom
MLP 2x3
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VS1S2
VGS
IS1S2
PD
TJ, TSTG
Parameter
Source1 to Source2 Voltage
Gate to Source Voltage
Source1 to Source2 Current -Continuous
-Pulsed
TA = 25°C
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
20
±12
9.7
40
2.2
0.8
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient(Dual Operation)
Thermal Resistance, Junction to Ambient(Dual Operation)
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
57
161
°C/W
Device Marking
307
Device
FDMB2307NZ
Package
MLP 2x3
Reel Size
7’’
Tape Width
8 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
FDMB2307NZ Rev.C5
1
www.fairchildsemi.com
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FDMB2307NZ pdf
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Typical Characteristics TJ = 25°C unless otherwise noted
1000
100
SINGLE PULSE
RθJA = 161 oC/W
TA = 25 oC
10
1
0.5
10-3
10-2
10-1
1
10
t, PULSE WIDTH (sec)
Figure 13. Single Pulse Maximum Power Dissipation
100
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
PDM
0.01
0.001
10-3
SINGLE PULSE
RθJA = 161 oC/W
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
1000
1000
©2011 Fairchild Semiconductor Corporation
FDMB2307NZ Rev.C5
5
www.fairchildsemi.com
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