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PDF 2SB938A Data sheet ( Hoja de datos )
| Número de pieza | 2SB938A | |
| Descripción | Silicon PNP epitaxial planar type Darlington(For power amplification and switching) | |
| Fabricantes | Panasonic Semiconductor | |
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Power Transistors
2SB938, 2SB938A
Silicon PNP epitaxial planar type Darlington
For power amplification and switching
Complementary to 2SD1261 and 2SD1261A
s Features
q High foward current transfer ratio hFE
q High-speed switching
q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SB938
base voltage 2SB938A
VCBO
–60
–80
V
Collector to 2SB938
emitter voltage 2SB938A
VCEO
–60
–80
V
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
–5
–8
–4
40
1.3
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
V
A
A
W
˚C
˚C
Conditions
Collector cutoff
2SB938
current
2SB938A
Collector cutoff
2SB938
current
2SB938A
Emitter cutoff current
Collector to emitter 2SB938
voltage
2SB938A
Forward current transfer ratio
Base to emitter voltage
ICBO
ICEO
IEBO
VCEO
hFE1
hFE2*
VBE
Collector to emitter saturation voltage VCE(sat)
Transition frequency
Turn-on time
Storage time
Fall time
fT
ton
tstg
tf
VCB = –60V, IE = 0
VCB = –80V, IE = 0
VCE = –30V, IB = 0
VCE = –40V, IB = 0
VEB = –5V, IC = 0
IC = –30mA, IB = 0
VCE = –3V, IC = – 0.5A
VCE = –3V, IC = –3A
VCE = –3V, IC = –3A
IC = –3A, IB = –12mA
IC = –5A, IB = –20mA
VCE = –10V, IC = – 0.5A, f = 1MHz
IC = –3A, IB1 = –12mA, IB2 = 12mA
*hFE2 Rank classification
Rank
Q
P
hFE2 2000 to 5000 4000 to 10000
Internal Connection
B
8.5±0.2
6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
1.5max.
0.8±0.1
2.54±0.3
5.08±0.5
123
8.5±0.2
6.0±0.3
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
0.8±0.1
2.54±0.3
5.08±0.5
R0.5
R0.5
1.1 max.
0 to 0.4
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
min typ
–60
–80
1000
2000
15
0.3
2
0.5
C
max
–200
–200
–500
–500
–2
Unit
µA
µA
mA
V
10000
–2.5
–2
–4
V
V
MHz
µs
µs
µs
E
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SB938A.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SB938 | Silicon PNP epitaxial planar type Darlington(For power amplification and switching) | Panasonic Semiconductor |
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| 2SB938A | Silicon PNP epitaxial planar type Darlington(For power amplification and switching) | Panasonic Semiconductor |
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