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PDF 2SB873 Data sheet ( Hoja de datos )
| Número de pieza | 2SB873 | |
| Descripción | Silicon PNP epitaxial planer type(For low-frequency power amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SB873 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Transistor
2SB873
Silicon PNP epitaxial planer type
For low-frequency power amplification
For DC-DC converter
For stroboscope
s Features
q Low collector to emitter saturation voltage VCE(sat).
q Large collector current IC.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
–30
–20
–7
–10
–5
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
5.9±0.2
Unit: mm
4.9±0.2
0.7±0.1
2.54±0.15
+0.2
0.45–0.1
1.27
1.27
123
+0.2
0.45–0.1
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
IEBO
VCEO
VEBO
hFE*1
VCE(sat)
fT
Cob
Conditions
VCB = –10V, IE = 0
VEB = –5V, IC = 0
IC = –1mA, IB = 0
IE = –10µA, IC = 0
VCE = –2V, IC = –2A*2
IC = –3A, IB = –0.1A*2
VCB = –6V, IE = 50mA, f = 200MHz
VCB = –20V, IE = 0, f = 1MHz
min
–20
–7
90
typ max Unit
–100 nA
–100 nA
V
V
625
–1 V
120 MHz
85 pF
*2 Pulse measurement
*1hFE Rank classification
Rank
P
Q
hFE 90 ~ 135 120 ~ 205
R
180 ~ 625
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SB873.PDF ] | |
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