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Número de pieza | DMN2300UFD | |
Descripción | 20V N-CHANNEL ENHANCEMENT MODE MOSFET | |
Fabricantes | Diodes Incorporated | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de DMN2300UFD (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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A Product Line of
Diodes Incorporated
DMN2300UFD
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
20V
RDS(on) Max
200mΩ @ VGS = 4.5V
260mΩ @ VGS = 2.5V
400mΩ @ VGS = 1.8V
500mΩ @ VGS = 1.5V
ID max
TA = 25°C
(Notes 4)
1.73A
1.50A
1.27A
1.15A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• Load switch
Features and Benefits
• Low Gate Threshold Voltage
• Fast Switching Speed
• “Lead Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free. "Green" Device (Note 2)
• ESD Protected Gate 2KV
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: X1-DFN1212-3
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ۛ NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Weight: 0.005 grams (approximate)
X1-DFN1212-3
Drain
Gate
Body
Diode
Top View
Bottom View
Ordering Information (Note 3)
Part Number
DMN2300UFD-7
Marking
KS2
Reel size (inches)
7
Notes:
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Gate
Protection
Diode
Source
Equivalent Circuit
Tape width (mm)
8
Pin-out Top view
Quantity per reel
3000
Marking Information
KS2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2011
Y
Jan Feb
12
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun Jul
67
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
DMN2300UFD
Datasheet Number: DS35443 Rev. 2 - 2
1 of 7
www.diodes.com
September 2011
© Diodes Incorporated
Datasheet pdf - http://www.DataSheet4U.net/
1 page www.DataSheet.co.kr
1.7
VGS = 2.5V
ID = 500mA
1.5
VGS = 4.5V
ID = 1.0A
1.3
VGS = 1.8V
ID = 100mA
1.1
VGS = 1.5V
0.9 ID = 50mA
0.7
0.5
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 10 On-Resistance Variation with Temperature
1.2
A Product Line of
Diodes Incorporated
DMN2300UFD
0.6
0.5
VGS = 1.8V
0.4
VGS = 1.5V
ID = 50mA
ID = 100mA
0.3
0.2
VGS = 4.5V
0.1
VGS = 2.5V
ID = 1.0A
ID = 500mA
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 11 On-Resistance Variation with Temperature
2.0
1.0
0.8 ID = 1mA
0.6 ID = 250µA
0.4
0.2
1.6
1.2 TA = 25°C
0.8
0.4
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 12 Gate Threshold Variation vs. Ambient Temperature
1,000
TA = 125°C
100
10
TA = 85°C
TA = 25°C
TA = -55°C
0
0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 13 Diode Forward Voltage vs. Current
100,000
10,000
1,000
100
10
TA = 125°C
TA = 150°C
TA = 85°C
TA = 25°C
TA = -55°C
1
2 4 6 8 10 12 14 16 18 20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 14 Typical Leakage Current
vs. Drain-Source Voltage
DMN2300UFD
Datasheet Number: DS35443 Rev. 2 - 2
5 of 7
www.diodes.com
1
2 4 6 8 10 12
VGS, GATE-SOURCE VOLTAGE (V)
Fig.15 Leakage Current vs. Gate-Source Voltage
September 2011
© Diodes Incorporated
Datasheet pdf - http://www.DataSheet4U.net/
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet DMN2300UFD.PDF ] |
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