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Número de pieza | DMN2300UFB4 | |
Descripción | 20V N-CHANNEL ENHANCEMENT MODE MOSFET | |
Fabricantes | Diodes Incorporated | |
Logotipo | ||
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A Product Line of
Diodes Incorporated
DMN2300UFB4
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
20V
RDS(on)
175mΩ @ VGS = 4.5V
240mΩ @ VGS = 2.5V
360mΩ @ VGS = 1.8V
ID max
TA = 25°C
(Notes 4)
1.30A
1.11A
0.91A
Features and Benefits
• Footprint of just 0.6mm2 – thirteen times smaller than SOT23
• 0.4mm profile – ideal for low profile applications
• Low Gate Threshold Voltage
• Fast Switching Speed
• “Lead Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free. "Green" Device (Note 2)
• ESD Protected Gate 2KV
• Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• Load switch
Mechanical Data
• Case: DFN1006H4-3
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Weight: 0.001 grams (approximate)
Drain
DFN1006H4-3
ESD PROTECTED TO 2kV
Bottom View
S
D
G
Top View
Internal Schematic
Gate
Body
Diode
Gate
Protection
Diode
Source
Equivalent Circuit
Ordering Information (Note 3)
Part Number
DMN2300UFB4-7B
Marking
NL
Reel size (inches)
7
Notes:
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Tape width (mm)
8
Quantity per reel
10,000
Marking Information
DMN2300UFB4-7B
NL NL = Product Type Marking Code
Top View
Bar Denotes Gate
and Source Side
DMN2300UFB4
Document number: DS35269 Rev. 2 - 2
1 of 6
www.diodes.com
May 2011
© Diodes Incorporated
Datasheet pdf - http://www.DataSheet4U.net/
1 page www.DataSheet.co.kr
A Product Line of
Diodes Incorporated
DMN2300UFB4
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01 D = 0.01
D = 0.005
D = Single Pulse
0.001
0.00001 0.0001
0.001
D = 0.9
0.01
0.1
1
t1, PULSE DURATION TIME (s)
Fig. 12 Transient Thermal Response
RθJA(t) = r(t) * RθJA
RθJA = 253°C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1/t2
10 100 1,000
Package Outline Dimensions
A
A1
E b2
D
L2 L3 L1
Suggested Pad Layout
X1
X G2
C
G1
Y
Z
b1
e
DFN1006H4-3
Dim Min Max Typ
A ⎯ 0.40 ⎯
A1 0 0.05 0.03
b1 0.10 0.20 0.15
b2 0.45 0.55 0.50
D 0.95 1.05 1.00
E 0.55 0.65 0.60
e ⎯ ⎯ 0.35
L1 0.20 0.30 0.25
L2 0.20 0.30 0.25
L3 ⎯ ⎯ 0.40
All Dimensions in mm
Dimensions
Z
G1
G2
X
X1
Y
C
Value (in mm)
1.1
0.3
0.2
0.7
0.25
0.4
0.7
DMN2300UFB4
Document number: DS35269 Rev. 2 - 2
5 of 6
www.diodes.com
May 2011
© Diodes Incorporated
Datasheet pdf - http://www.DataSheet4U.net/
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet DMN2300UFB4.PDF ] |
Número de pieza | Descripción | Fabricantes |
DMN2300UFB | 20V N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
DMN2300UFB4 | 20V N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
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