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PDF 2N2955 Data sheet ( Hoja de datos )

Número de pieza 2N2955
Descripción PNP EPITAXIAL PLANAR TRANSISTOR
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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
2N2955
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for power switching circuits, series and
shunt regulators, output stages and high fidelity
amplifiers.
Pinning
1 = Base
2 = Emitter
Case = Collector
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation(TC=25oC)
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VCEV
VEBO
IC
IB
PD
TJ
TSTG
Rating
-100
-60
-70
-7
-15
-7
115
+200
-65 to +200
Unit
V
V
V
V
A
A
W
oC
oC
TO-3
.135
(3.43)
Max
(319.5.9763)Max
.875(22.23)
.759(19.28)
.169(4.30)
.151(3.84)
.043(1.09)
.038(0.97)
1.197(30.40)
1.177(29.90)
.681(17.30)
.655(16.64)
2
.225(5.72)
.205(5.20)
1
.450(11.43)
.250(6.35)
.480(12.19)
.440(11.18)
.169(4.30)
.151(3.84)
.440(11.18) 1.050(26.67)
.420(10.67) 1.011(25.68)
Case: Collector
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Collector-Emitter Sustaining Volatge
Collector Cutoff Current
Symbol
VCEO(sus)
VCER(sus)
ICEO
ICEX
Emitter Cutoff Current
Collector-Emitter Saturation Voltage(1)
Base-Emitter On Voltage(1)
DC Current Gain(1)
IEBO
VCE(sat)1
VCE(sat)2
VBE(on)
hFE1
hFE2
Second Breakdown Collector with
Base Forward Bias
Is/b
Current Gain - Bandwidth Product
fT
Small-Signal Current Gain
hfe
Small-Signal Current Gain Cutoff Frequency fhfe
(1)Pulse Test: Pulse Width 300µs, Duty Cycle 2%
Min
-60
-70
-
-
-
-
-
-
-
20
5
-2.87
2.5
15
10
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-0.7
-1
-5
-5
-1.1
-3
-1.5
70
-
-
-
120
-
Unit
V
V
mA
mA
mA
mA
V
V
V
-
-
A
MHz
-
KHz
Test Conditions
IC=-0.2A, IB=0
IC=-0.2A, RBE=100
VCE=-30V, IB=0
VCE=-100V, VBE(off)=-1.5V
VCE=-100V, VBE(off)=-1.5V, TC=150oC
VBE=-7V, IC=0
IC=-4A, IB=-0.4A
IC=-10A, IB=-3.3A
IC=-4A, VCE=-4V
IC=-4A, VCE=-4V
IC=-10A, VCE=-4V
VCE=-40V, t=1.0s, Non-repetitive
IC=-0.5A, VCE=-10V, f=1MHz
IC=-10A, VCE=-4V, f=1KHz
IC=-1A, VCE=-4V, f=1KHz

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