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Descripción Single Phase Bridge Rectifier
Fabricantes Naina Semiconductor 
Logotipo Naina Semiconductor Logotipo



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Naina Semiconductor Ltd.
Single Phase Bridge Rectifier
Features
Glass passivated chip junction
Surge capability of 150 A
High efficiency
Electrically isolated metal case for maximum heat dissipation
Mounting: thru hole for # 6 screw
10MB
Thermal and Mechanical Specifications (TA = 250C unless otherwise
noted)
Parameters
Symbol Values Units
Maximum operating junction
temperature range
TJ
- 55 to +
125
0C
Maximum storage temperature
range
TStg
- 55 to +
150
0C
Approximate weight
WT 30 g
GBPC
Voltage Ratings (TA = 250C unless otherwise noted)
Parameter
Symbol
10MB
Units
Maximum repetitive peak reverse
voltage
VRRM 50 100 200 400 600 800 1000
V
Maximum RMS voltage
VRMS 35 70 140 280 420 560 700
V
Maximum DC blocking voltage
VDC 50 100 200 400 600 800 1000 V
Maximum average forward output
current
IF(AV)
10.0
A
Peak forward surge current (10ms)
single half sine-wave superimposed
on rated load
IFSM
150 A
Maximum DC forward voltage drop
per element @ 7.5 A
VF
1.1 V
Maximum DC reverse
current at rated DC
blocking voltage per
element
TA =
250C
TA =
1250C
IR
5.0
µA
500
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
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