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Número de pieza | IN5832 | |
Descripción | Schottky Diodes | |
Fabricantes | Naina Semiconductor | |
Logotipo | ||
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Naina Semiconductor Ltd.
1N5832
Schottky Barrier Rectifier Diode
Features
• Fast Switching
• Low forward voltage drop, VF
• Guard ring protection
• High surge capacity
• High efficiency, low power loss
Electrical Ratings (TC = 250C, unless otherwise noted)
Parameter
Symbol Values Units
Repetitive peak reverse voltage
DC blocking voltage
VRRM
20 V
VDC
Non-repetitive peak reverse
voltage
VRSM 24 V
Average rectified forward current
(TC = 85OC)
IF(AV)
40
A
Non-repetitive peak surge current
(surge applied at rated load
conditions, halfwave, single phase,
IFSM
800
A
60 Hz
DO-203AB (DO-5)
Maximum Ratings (TC = 250C, unless otherwise noted)
Parameter
Maximum instantaneous forward voltage
Maximum instantaneous reverse current at rated DC voltage
Test Conditions
IF = 10 A
IF = 40 A
IF = 125 A
TC = 25OC
TC = 100OC
Symbol
VF
IR
Values
0.36
0.52
0.98
20
150
Units
V
V
V
mA
mA
Thermal & Mechanical Specifications (TE = 250C, unless otherwise noted)
Parameters
Symbol
Maximum thermal resistance, junction to case
Rth(JC)
Operating junction temperature range
Storage temperature
TJ
Tstg
Mounting torque (non-lubricated threads)
Approximate allowable weight
W
Values
1.0
-65 to +125
-65 to +125
15
45.6
Units
0C/W
0C
0C
in-lb
g
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
Datasheet pdf - http://www.DataSheet4U.net/
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet IN5832.PDF ] |
Número de pieza | Descripción | Fabricantes |
IN5831 | Schottky Diodes | Naina Semiconductor |
IN5832 | Schottky Diodes | Naina Semiconductor |
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