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PDF 2SB790 Data sheet ( Hoja de datos )
| Número de pieza | 2SB790 | |
| Descripción | Silicon PNP epitaxial planer type(Silicon PNP epitaxial planer type) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SB790
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD969
s Features
q Low collector to emitter saturation voltage VCE(sat).
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–25
–20
–7
–1
– 0.5
600
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
321
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
ICEO
VCBO
VCEO
VEBO
hFE1*1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
VCB = –25V, IE = 0
–100 nA
VCE = –20V, IB = 0
–1 µA
IC = –10µA, IE = 0
–25
V
IC = –1mA, IB = 0
–20
V
IC = –10µA, IC = 0
–7
V
VCE = –2V, IC = –0.5A*2
90 220
VCE = –2V, IC = –1A*2
25
IC = –500mA, IB = –50mA*2
– 0.4
V
IC = –500mA, IB = –50mA*2
–1.2 V
VCB = –10V, IE = 50mA, f = 200MHz 150 MHz
VCB = –10V, IE = 0, f = 1MHz
15 25 pF
*2 Pulse measurement
*1hFE1 Rank classification
Rank
Q
R
hFE1 90 ~ 155 130 ~ 220
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SB790.PDF ] | |
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