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PDF 2SB726 Data sheet ( Hoja de datos )
| Número de pieza | 2SB726 | |
| Descripción | Silicon PNP epitaxial planer type Transistor | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SB726
Silicon PNP epitaxial planer type
For general amplification
s Features
q High foward current transfer ratio hFE.
q High collector to emitter voltage VCEO.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
–80
–80
–5
–100
250
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
5.0±0.2
Unit: mm
4.0±0.2
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
ICBO
ICEO
VCBO
VCEO
VEBO
hFE*
VCE(sat)
VBE
fT
Conditions
VCB = –10V, IE = 0
VCE = –10V, IB = 0
IC = –10µA, IE = 0
IC = –2mA, IB = 0
IE = –10µA, IC = 0
VCB = –5V, IE = –2mA
IC = –20mA, IB = –2mA
VCE = –1V, IC = –100mA
VCB = –5V, IE = 2mA, f = 200MHz
min typ max Unit
–100 nA
–1 µA
–80 V
–80 V
–5 V
180 700
– 0.6
V
–1 –1.2 V
150 MHz
*hFE Rank classification
Rank
R
hFE 180 ~ 360
S
260 ~ 520
T
360 ~ 700
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SB726.PDF ] | |
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