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PDF 2SB710 Data sheet ( Hoja de datos )

Número de pieza 2SB710
Descripción Silicon PNP Epitaxial Transistor
Fabricantes Panasonic Semiconductor 
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No Preview Available ! 2SB710 Hoja de datos, Descripción, Manual

Transistors
2SB0710 (2SB710), 2SB0710A (2SB710A)
Silicon PNP epitaxial planar type
For general amplification
Unit: mm
Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A)
Features
Large collector current IC
Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing and the magazine packing
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage
(Emitter open)
2SB0710 VCBO
2SB0710A
30
60
Collector-emitter voltage 2SB0710 VCEO
(Base open)
2SB0710A
25
50
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VEBO
IC
ICP
PC
Tj
Tstg
5
0.5
1
200
150
55 to +150
Electrical Characteristics Ta = 25°C ± 3°C
Unit
V
V
V
A
A
mW
°C
°C
0.40+–00..0150
3
0.16+–00..0160
12
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol:
2SB0710: C
2SB0710A: D
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
2SB0710
2SB0710A
2SB0710
2SB0710A
VCBO
VCEO
IC = −10 µA, IE = 0
IC = −10 mA, IB = 0
30
60
25
50
V
V
Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0
5
V
Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0
0.1 µA
Forward current transfer ratio *1
hFE1 *2 VCE = −10 V, IC = −150 mA
85 340
hFE2 VCE = −10 V, IC = −500 mA
40
Collector-emitter saturation voltage *1 VCE(sat) IC = −300 mA, IB = −30 mA
0.35 0.60 V
Base-emitter saturation voltage *1
VBE(sat) IC = −300 mA, IB = −30 mA
1.1 1.5
V
Transition frequency
fT VCB = −10 V, IE = 50 mA, f = 200 MHz
200
MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = −10 V, IE = 0, f = 1 MHz
6 15 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
hFE1
Marking 2SB0710
Q
85 to 170
CQ
R
120 to 240
CR
S
170 to 340
CS
No-rank
85 to 340
C
Product of no-rank is not
classified and have no
marking symbol for rank.
symbol 2SB0710A
DQ
DR
DS
D
Note) The part numbers in the parenthesis show conventional part number.
Publication date: May 2003
SJC00048CED
1

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