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PDF 2SB649A Data sheet ( Hoja de datos )
| Número de pieza | 2SB649A | |
| Descripción | Silicon PNP Epitaxial | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SB649A (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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2SB649, 2SB649A
Silicon PNP Epitaxial
Application
Low frequency power amplifier complementary pair with 2SD669/A
Outline
TO-126 MOD
123
1. Emitter
2. Collector
3. Base
1 page  
DC Current Transfer Ratio
vs. Collector Current
350
VCE = –5V
350 Ta = 75°C
250
25°C
200
150 –25°C
100
50
0
–1 –10 –100 –1,000
Collector current IC (mA)
2SB649, 2SB649A
–1.2
–1.0
Collector to Emitter Saturation
Voltage vs. Collector Current
IC = 10 IB
–0.8
–0.6
–0.4
–0.2
–0
–1
–25
25
–10 –100
Collector current IC (mA)
–1,000
–1.2
Base to Emitter Saturation Voltage
vs. Collector Current
IC = 10 IB
–1.0
–0.8 Ta = –25°C
25
–0.6 75
–0.4
–0.2
–0
–1
–10 –100
Collector current IC (mA)
–1,000
Gain Bandwidth Product
vs. Collector Current
240
VCE = –5 V
200
160
120
80
40
0
–10 –30 –100 –300 –1,000
Collector current IC (mA)
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SB649A.PDF ] | |
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