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PDF 2SB1645 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1645 | |
| Descripción | Silicon PNP triple diffusion planar type Darlington(For power amplification) | |
| Fabricantes | Panasonic Semiconductor | |
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Power Transistors
2SB1645
Silicon PNP triple diffusion planar type Darlington
For power amplification
I Features
• Satisfactory forward current transfer ratio hFE characteristics
• Wide area of safe operation (ASO)
• Optimum for the output stage of a HiFi audio amplifier
I Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC = 25°C
dissipation
Ta = 25°C
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
−160
−160
−5
−15
−8
100
3
150
−55 to +150
Unit
V
V
V
A
A
W
°C
°C
Unit: mm
15.5±0.5 φ 3.2±0.1
5°
3.0±0.3
5°
(4.0)
2.0±0.2
5°
5°
5°
1.1±0.1
0.7±0.1
5.45±0.3
10.9±0.5
5°
12 3
1: Base
2: Collector
3: Emitter
TOP-3E Package
Internal Connection
B
C
I Electrical Characteristics TC = 25°C
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
ICEO
IEBO
VCEO
hFE1
hFE2 *
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = −160 V, IE = 0
VCB = −160 V, IE = 0
VEB = −5 V, IC = 0
IC = −10 mA, IB = 0
VCE = −5 V, IC = −1 A
VCE = −5 V, IC = −7 A
IC = −7 A, IB = −7 mA
IC = −7 A, IB = −7 mA
VCE = −10 V, IC = − 0.5 A, f = 1 MHz
IC = 7 A, IB1 = −7 mA, IB2 = 7 mA
VCC = −50 V
Note) *: Rank classification
Rank
P
Q
hFE2 5 000 to 15 000 3 500 to 10 000
Min
−160
500
3 500
E
Typ Max
−100
−100
−100
15 000
−3
−3
20
1.0
1.5
1.2
Unit
µA
µA
µA
V
V
V
MHz
µs
µs
µs
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SB1645.PDF ] | |
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