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PDF 2SB1629 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1629 | |
| Descripción | Silicon PNP epitaxial planar type(For power amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Power Transistors
2SB1629
Silicon PNP epitaxial planar type
For power amplification
Unit: mm
s Features
q High foward current transfer ratio hFE
q Satisfactory linearity of foward current transfer ratio hFE
q Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
IB
PC
–60
–60
–6
–6
–3
–1
40
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
9.9±0.3
φ3.2±0.1
4.6±0.2
2.9±0.2
1.2±0.15
1.45±0.15
2.6±0.1
0.7±0.1
0.75±0.1
2.54±0.2
5.08±0.4
7° 1 2 3
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
ICBO
ICEO
IEBO
VCB = –60V, IE = 0
VEB = –40V, IB = 0
VEB = –6V, IC = 0
–100
–100
–100
µA
µA
µA
Collector to emitter voltage
Forward current transfer ratio
VCEO
hFE*
IC = –25mA, IB = 0
VCE = –4V, IC = – 0.5A
–60 V
300 700
Collector to emitter saturation voltage VCE(sat)
IC = –2A, IB = – 0.05A
–1 V
Transition frequency
fT VCE = –12V, IC = – 0.2A, f = 10MHz
30
MHz
*hFE Rank classification
Rank
Q
hFE 300 to 500
P
400 to 700
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SB1629.PDF ] | |
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