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PDF RFHA1020 Data sheet ( Hoja de datos )
| Número de pieza | RFHA1020 | |
| Descripción | 280W GaN WIDE-BAND PULSED POWER AMPLIFIER | |
| Fabricantes | RF Micro Devices | |
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RFHA1020
280W GaN WIDE-BAND PULSED
POWER AMPLIFIER
Package: Flanged Ceramic, 2 Pin
Features
Wideband Operation: 1.2GHz
to 1.4GHz
Advanced GaN HEMT
Technology
Advanced Heat-Sink
Technology
Optimized Evaluation Board
Layout for 50Operation
Integrated Matching
Components for High
Terminal Impedances
50V Operation Typical
Performance:
Output Pulsed Power: 280W
Pulse Width: 100s, Duty Cycle
10 %
Small Signal Gain: 15dB
High Efficiency (55%)
- 40°C to 85°C Operating
Temperature
Applications
Radar
Air Traffic Control and
Surveillance
General Purpose Broadband
Amplifiers
RF IN
VG
Pin 1 (CUT)
GND
BASE
RF OUT
VD
Pin 2
Functional Block Diagram
Product Description
The RFHA1020 is a 50V 280W high power discrete amplifier designed for L-Band
pulsed radar, Air Traffic Control and Surveillance and general purpose broadband
amplifier applications. Using an advanced high power density Gallium Nitride (GaN)
semiconductor process, these high performance amplifiers achieve high output
power, high efficiency, and flat gain over a broad frequency range in a single pack-
age. The RFHA1020 is a matched power transistor packaged in a hermetic, flanged
ceramic package. The package provides excellent thermal stability through the use
of advanced heat sink and power dissipation technologies. Ease of integration is
accomplished through the incorporation of single, optimized matching networks
that provide wideband gain and power performance in a single amplifier.
Ordering Information
RFHA1020
280W GaN Wide-Band Pulsed Power Amplifier
RFHA1020PCBA-410 Fully Assembled Evaluation Board Optimized for 1.2GHz to
1.4GHz; 50V
DS110719
Optimum Technology Matching® Applied
GaAs HBT
SiGe BiCMOS
GaAs pHEMT
GaN HEMT
GaAs MESFET
Si BiCMOS
Si CMOS
InGaP HBT
SiGe HBT
Si BJT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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RFHA1020
Gain/ Efficiency versus POUT , f = 1300MHz
(Pulsed 10% duty cycle, 100μS, VD = 50V, IDQ = 440mA)
18
70
17 60
16 50
15 40
14 30
13
Gain Drain Eff
20
12 10
45 46 47 48 49 50 51 52 53 54 55
Output Power (dBm)
320
310
300
290
280
270
260
250
240
230
220
210
200
10
POUT/DE versus Pulse Width, f = 1300MHz
(Pulsed 10% duty cycle, VD = 50V, IDQ = 440mA)
Output Power
Drain Efficiency
100
Pulse Width (usec)
1000
350
325
300
275
250
225
200
10
POUT/DE versus Duty Cycle, f = 1300MHz
(Pulsed, 100μs pulse, VD = 50V, IDQ = 440mA)
Output Power
Drain Efficiency
20
30 40
Duty Cycle (%)
50
70
65
60
55
50
45
40
60
70
65
60
55
50
45
40
DS110719
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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10
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5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet RFHA1020.PDF ] | |
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