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PDF 2SB1605 Data sheet ( Hoja de datos )

Número de pieza 2SB1605
Descripción Silicon PNP epitaxial planar type(For low-freauency power amplification)
Fabricantes Panasonic Semiconductor 
Logotipo Panasonic Semiconductor Logotipo



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Power Transistors
2SB1605, 2SB1605A
Silicon PNP epitaxial planar type
For low-freauency power amplification
s Features
q High forward current transfer ratio hFE which has satisfactory linearity
q Low collector to emitter saturation voltage VCE(sat)
q Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SB1605
base voltage 2SB1605A
VCBO
–60
–80
Collector to 2SB1605
emitter voltage 2SB1605A
VCEO
–60
–80
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
–5
–5
–3
35
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
9.9±0.3
φ3.2±0.1
Unit: mm
4.6±0.2
2.9±0.2
1.2±0.15
1.45±0.15
2.6±0.1
0.7±0.1
0.75±0.1
2.54±0.2
5.08±0.4
7° 1 2 3
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff
2SB1605
current
2SB1605A
Collector cutoff
2SB1605
current
2SB1605A
Emitter cutoff current
Collector to emitter 2SB1605
voltage
2SB1605A
ICES
ICEO
IEBO
VCEO
VCE = –60V, VBE = 0
VCE = –80V, VBE = 0
VCE = –30V, IB = 0
VCE = –60V, IB = 0
VEB = –5V, IC = 0
IC = –30mA, IB = 0
–200
–200
µA
–300
–300
µA
–1 mA
–60
V
–80
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
hFE1*
hFE2
VBE
VCE(sat)
fT
ton
tstg
tf
VCE = –4V, IC = –1A
VCE = –4V, IC = –3A
VCE = –4V, IC = –3A
IC = –3A, IB = – 0.375A
VCE = –10V, IC = – 0.5A, f = 10MHz
70
10
IC = –1A, IB1 = – 0.1A, IB2 = 0.1A
250
–1.8 V
–1.2 V
30 MHz
0.5 µs
1.2 µs
0.3 µs
*hFE1 Rank classification
Rank
Q
P
hFE1 70 to 150 120 to 250
1

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