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PDF 2SB1604A Data sheet ( Hoja de datos )
| Número de pieza | 2SB1604A | |
| Descripción | Silicon PNP epitaxial planar type(For low-voltage switching) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Power Transistors
2SB1604, 2SB1604A
Silicon PNP epitaxial planar type
For low-voltage switching
s Features
q Low collector to emitter saturation voltage VCE(sat)
q High-speed switching
q Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SB1604
base voltage 2SB1604A
VCBO
–40
–50
Collector to 2SB1604
emitter voltage 2SB1604A
VCEO
–20
–40
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
–5
–20
–10
40
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
9.9±0.3
φ3.2±0.1
Unit: mm
4.6±0.2
2.9±0.2
1.2±0.15
1.45±0.15
2.6±0.1
0.7±0.1
0.75±0.1
2.54±0.2
5.08±0.4
7° 1 2 3
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
Collector to emitter 2SB1604
voltage
2SB1604A
ICBO
IEBO
VCEO
VCB = –40V, IE = 0
VEB = –5V, IC = 0
IC = –10mA, IB = 0
–50 µA
–50 µA
–20
V
–40
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
hFE1
hFE2*
VCE(sat)
VBE(sat)
fT
Cob
ton
tstg
tf
VCE = –2V, IC = – 0.1A
VCE = –2V, IC = –3A
IC = –10A, IB = – 0.33A
IC = –10A, IB = – 0.33A
VCE = –10V, IC = – 0.5A, f = 10MHz
VCB = –10V, IE = 0, f = 1MHz
45
90
IC = –3A, IB1 = – 0.1A, IB2 = 0.1A
260
– 0.6
V
–1.5 V
100 MHz
400 pF
0.1 µs
0.5 µs
0.1 µs
*hFE2 Rank classification
Rank
Q
P
hFE2 90 to 180 130 to 260
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SB1604A.PDF ] | |
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