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PDF 2SB1603 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1603 | |
| Descripción | Silicon PNP epitaxial planar type(For low-voltage switching) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Power Transistors
2SB1603, 2SB1603A
Silicon PNP epitaxial planar type
For low-voltage switching
s Features
q Low collector to emitter saturation voltage VCE(sat)
q High-speed switching
q Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SB1603
base voltage 2SB1603A
VCBO
–40
–50
Collector to 2SB1603
emitter voltage 2SB1603A
VCEO
–20
–40
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
–5
–8
–4
25
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
9.9±0.3
φ3.2±0.1
Unit: mm
4.6±0.2
2.9±0.2
1.2±0.15
1.45±0.15
2.6±0.1
0.7±0.1
0.75±0.1
2.54±0.2
5.08±0.4
7° 1 2 3
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
s Electrical Characteristics (TC=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter 2SB1603
voltage
2SB1603A
Symbol
ICBO
IEBO
VCEO
Conditions
VCB = –40V, IE = 0
VEB = –5V, IC = 0
IC = –10mA, IB = 0
min typ max Unit
–50 µA
–50 µA
–20
V
–40
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
hFE1
hFE2*
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCE = –2V, IC = – 0.1A
45
VCE = –2V, IC = –1A
90 260
IC = –2A, IB = – 0.1A
– 0.5
V
IC = –2A, IB = – 0.1A
–1.5 V
VCE = –5V, IC = – 0.5A, f = 10MHz 150 MHz
0.3 µs
IC = –2A, IB1 = – 0.2A, IB2 = 0.2A
0.4 µs
0.1 µs
*hFE2 Rank classification
Rank
Q
P
hFE2 90 to 180 130 to 260
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SB1603.PDF ] | |
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