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PDF 2SB1592 Data sheet ( Hoja de datos )

Número de pieza 2SB1592
Descripción Silicon PNP epitaxial planer type(For low-frequency amplification)
Fabricantes Panasonic Semiconductor　
Logotipo Panasonic Semiconductor Logotipo



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No Preview Available ! 2SB1592 Hoja de datos, Descripción, Manual

Transistor
2SB1592
Silicon PNP epitaxial planer type
For low-frequency amplification
s Features
q Low collector to emitter saturation voltage VCE(sat).
q Allowing supply with the radial taping.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage VCEO
Emitter to base voltage
VEBO
Peak collector current
ICP*
Collector current
IC
Collector power dissipation PC
Junction temperature
Tj
Storage temperature
Tstg
* Applied are shot pulse of ≤1ms width
Ratings
–30
–25
–11
–10
–3
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
5.0±0.2
Unit: mm
4.0±0.2
0.7±0.1
1.27
+0.15
0.45 –0.1
+0.15
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
TO–92NL Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector to base voltage
VCBO
IC = –10µA, IE = 0
–30
V
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
VCEO
VEBO
hFE*1
VCE(sat)
fT
IC = –1mA, IB = 0
–25
V
IE = –10µA, IC = 0
–11
V
VCE = –2V, IC = –1.4A*2
90 450
IC = –1.4A, IB = –25mA*2
– 0.16 – 0.22 V
VCB = –6V, IE = 50mA, f = 200MHz 150 MHz
Collector output capacitance
Cob
VCB = –10V, IE = 0, f = 1MHz
85 pF
*2 Pulse measurement
*1hFE Rank classification
Rank
Q
R
hFE 90 ~ 180 130 ~ 450
1

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