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PDF 2SB1589 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1589 | |
| Descripción | Silicon PNP epitaxial planer type(For low-frequency output amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SB1589
Silicon PNP epitaxial planer type
For low-frequency output amplification
Unit: mm
s Features
q Low collector to emitter saturation voltage VCE(sat).
q Large collector power dissipation PC.
q Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–10
V
Collector to emitter voltage VCEO
–10
V
Emitter to base voltage
VEBO
–7
V
Peak collector current
ICP
–2 A
Collector current IC –1.5 A
Collector power dissipation PC* 1 W
Junction temperature
Tj
150 ˚C
Storage temperature
Tstg –55 ~ +150 ˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
4.5±0.1
1.6±0.2
1.5±0.1
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : 1U
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
ICBO
VCBO
VCEO
VEBO
hFE
VCE(sat)
fT
VCB = –7V, IE = 0
–1 µA
IC = –10µA, IE = 0
–10
V
IC = –1mA, IB = 0
–10
V
IE = –10µA, IC = 0
–7
V
VCE = –1V, IC = –400mA*2
200
700
IC = –1A, IB = –25mA*2
– 0.24 – 0.35 V
VCB = –6V, IE = 50mA, f = 200MHz 190 MHz
Collector output capacitance
Forward voltage
*1 Applicable to the built-in diode.
Cob
VF*1
VCB = –10V, IE = 0, f = 1MHz
IF = –500mA
65 pF
–1.3 V
*2 Pulse measurement
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SB1589.PDF ] | |
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