|
|
PDF IXZ4DF12N100 Data sheet ( Hoja de datos )
| Número de pieza | IXZ4DF12N100 | |
| Descripción | RF Power MOSFET & DRIVER | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IXZ4DF12N100 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
www.DataSheet.co.kr
IXZ4DF12N100
RF Power MOSFET & DRIVER
Driver / MOSFET Combination
DEIC-515 Driver combined with a DE375-102N12A MOSFET
Gate driver matched to MOSFET
1000 Volts
12 A
0.7 Ohms
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power cycling capability
• IXYS advanced Z-MOS process
• Low RDS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other hazardous materials
• Built using the advantages and compatibility of CMOS and IXYS
HDMOS™ processes
• Latch-Up Protected
• Low Quiescent Supply Current
Advantages
• Optimized for RF and high speed
• Easy to mount—no insulators needed
• High power density
• Single package reduces size and heat sink area
Applications
• Class D or E Switching
Amplifier
• Multi MHz Switch Mode
Power Supplies (SMPS)
Description
The IXZ4DF12N100 is a CMOS high speed high current gate driver and a MOSFET combination specifically
designed Class D, E, HF, RF applications at up to 40MHz, as well as other applications. The IXZ4DF12N100 in
pulse mode can provide 72A of peak current while producing voltage rise and fall times of less than 5ns, and
minimum pulse widths of 8ns. The input of the driver is fully immune to latch up over the entire operating
range. Designed with small internal delays, the IXZ4DF12N100 is suitable for higher power operation where
combiners are used. Its features and wide safety margin in operating voltage and power make the
IXZ4DF12N100 unmatched in performance and value.
The IXZ4DF12N100 is packaged in DEIs low inductance RF package incorporating DEI's RF layout techniques
to minimize stray lead inductances for optimum switching performance. The IXZ4DF12N100 is a surface-
mountable device.
Figure 1.
Functional Diagram
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
Fig. 14
10
1
0.1
VCCIN Supply Current vs. Frequency
Driver Section
20V
15V
8V
0.01
0.001
0
10 20 30 40
Frequency (MHz)
50
IXZ4DF12N100
RF Power MOSFET & DRIVER
Test Circuit
Fig. 15
4.7UF
0.01u 0.01u 0.01u 0.01u 0.47u 0.47u
VCC
4.7UF
VCC
DGND
INVCC
IN IN
INGND
VCC
L1 CM Choke
4.7UF 0.01u 0.01u 0.01u 0.01u
DGND
VCC
++
4.7UF
0.47u 0.47u
Source
VDD
10UF 100V
Drain
5 ohm 20W
Source
.01uF
Place all capacitors on VCC as
close to the VCC lead as possible
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IXZ4DF12N100.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IXZ4DF12N100 | RF Power MOSFET & DRIVER | IXYS Corporation |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |