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PDF FDMS8662 Data sheet ( Hoja de datos )
| Número de pieza | FDMS8662 | |
| Descripción | N-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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www.DataSheet.co.kr
November 2007
FDMS8662
N-Channel PowerTrench® MOSFET
30V, 49A, 2.0mΩ
tm
Features
General Description
Max rDS(on) = 2.0mΩ at VGS = 10V, ID = 28A
Max rDS(on) = 3.0mΩ at VGS = 4.5V, ID = 24A
Advanced Package and Silicon combination
for low rDS(on) and high efficiency
MSL1 robust package design
RoHS Compliant
The FDMS8662 has been designed to minimize losses in power
conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance.
Applications
Low Side for Synchronous Buck to Power Core Processor
Secondary Side Synchronous Rectifier
Low Side Switch in POL DC/DC Converter
Oring FET/ Load Switch
Pin 1
S
S
S
G
D
D
D
D
Power 56 (Bottom View)
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25°C
TC = 25°C
TA = 25°C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
49
159
28
200
726
83
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.5
50
°C/W
Device Marking
FDMS8662
Device
FDMS8662
Package
Power 56
Reel Size
13’’
Tape Width
12mm
Quantity
3000units
©2007 Fairchild Semiconductor Corporation
FDMS8662 Rev.C1
1
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
Typical Characteristics TJ = 25°C unless otherwise noted
2
1
0.1
0.01
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.001
0.0001
10-3
SINGLE PULSE
RθJA = 125oC/W
10-2
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-1 100 101 102
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
103
©2007 Fairchild Semiconductor Corporation
FDMS8662 Rev.C1
5
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDMS8662.PDF ] | |
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