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NIKO-SEM P-Channel Logic Level Enhancement Mode P1403EVG
Field Effect Transistor
SOP-8
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30 14mΩ
ID
-11
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless O therwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
4 :GATE
5,6,7,8 :DRAIN
1,2,3 :SOURCE
100% UIS tested
LIMITS
-30
±25
-11
-9
-50
-43
90
2.5
1.6
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJc
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
TYPICAL
MAXIMUM
25
50
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = -250µA
VDS = VGS, ID = -250µA
-30
-1 -1.7
-3
V
VDS = 0V, VGS = ±25V
±100 nA
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V, TJ = 125 °C
-1
µA
-10
REV 1.3
Jun-22-2010
1
Datasheet pdf - http://www.DataSheet4U.net/