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PDF 2SB1492 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1492 | |
| Descripción | Silicon PNP epitaxial planar type Darlington(For power amplification) | |
| Fabricantes | Panasonic Semiconductor | |
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Power Transistors
2SB1492
Silicon PNP epitaxial planar type Darlington
For power amplification
Complementary to 2SD2254
20.0±0.5
Unit: mm
φ 3.3±0.2
5.0±0.3
3.0
s Features
q Optimum for 60W HiFi output
q High foward current transfer ratio hFE: 5000 to 30000
q Low collector to emitter saturation voltage VCE(sat): < –2.5V
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
PC
–130
–110
–5
–10
–6
70
3.5
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
1.5
2.0±0.3
3.0±0.3
1.0±0.2
1.5
2.7±0.3
0.6±0.2
5.45±0.3
10.9±0.5
123
1:Base
2:Collector
3:Emitter
TOP–3L Package
Internal Connection
C
B
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
ICEO
IEBO
VCEO
hFE1
hFE2*
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = –130V, IE = 0
VCE = –110V, IB = 0
VEB = –5V, IC = 0
IC = –30mA, IB = 0
VCE = –5V, IC = –1A
VCE = –5V, IC = –5A
IC = –5A, IB = –5mA
IC = –5A, IB = –5mA
VCE = –10V, IC = – 0.5A, f = 1MHz
IC = –5A, IB1 = –5mA, IB2 = 5mA,
VCC = –50V
min
–110
2000
5000
E
typ max Unit
–100 µA
–100 µA
–100 µA
V
30000
–2.5 V
–3.0
20 MHz
0.9 µs
2.5 µs
1.7 µs
*hFE2 Rank classification
Rank
Q
P
hFE2 5000 to 15000 8000 to 30000
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SB1492.PDF ] | |
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