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PDF 2SB1488 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1488 | |
| Descripción | Silicon PNP triple diffusion planer type(For power switching) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SB1488
Silicon PNP triple diffusion planer type
For power switching
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
s Features
q High foward current transfer ratio hFE.
q High-speed switching.
q High collector to base voltage VCBO.
q Allowing supply with the radial taping.
s Absolute Maximum Ratings (Ta=25˚C)
0.65 max.
0.45+–00..015
2.5±0.5 2.5±0.5
123
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–400
V
Collector to emitter voltage VCEO
–400
V
Emitter to base voltage
VEBO
–7
V
Peak collector current
ICP
–1 A
Collector current
IC
– 0.5
A
Collector power dissipation PC
1W
Junction temperature
Tj
150 ˚C
Storage temperature
Tstg –55 ~ +150 ˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
s Electrical Characteristics (Ta=25˚C)
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT2 Type Package
1.2±0.1
0.45+–00..105
0.65
max.
(HW type)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Collector current fall time
Collector output capacitance
Symbol
ICBO
ICEO
IEBO
VCEO
hFE1*1
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
Cob
*1hFE1 Rank classification
Rank
P
Q
hFE1 80 ~ 160 130 ~ 280
Conditions
VCB = –400V, IE = 0
VCE = –100V, IB = 0
VBE = –5V, IC = 0
IC = –1mA, IB = 0
VCE = –5V, IC = –50mA
VCE = –5V, IC = –300mA*2
IC = –100mA, IB = –10mA*2
IC = –100mA, IB = –10mA*2
VCB = –10V, IE = 0.1A, f = 1MHz*2
IC = –100mA, RL = 1.5kΩ
IB1 = –10mA, IB2 = 10mA
VCC = –150V
VCB = –10V, IE = 0, f = 1MHz
min
–400
80
10
typ max Unit
–1 µA
–1 µA
–1 µA
V
280
– 0.25 – 0.5
V
– 0.8 –1.2
V
25 MHz
0.4 1.0 µs
5.5 6.5 µs
0.5 1.0 µs
20 40 pF
*2 Pulse measurement
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SB1488.PDF ] | |
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