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PDF IRFHS9351PBF Data sheet ( Hoja de datos )
| Número de pieza | IRFHS9351PBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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VDS
VGS max
RDS(on) max
(@VGS = -10V)
ID
(@TC = 25°C)
-30
±20
170
d-3.4
V
V
mΩ
A
PD - 97572B
IRFHS9351PbF
HEXFET® Power MOSFET
T OP VIEW
S1 1
G1 2
D2 3
D1
FET1
6 D1
5 G2
D2
FET2
4 S2
D1
G2
S2
D2
D1
S1
G1
D2
2mm x 2mm Dual PQFN
Applications
l Charge and Discharge Switch for Battery Application
l System/load switch
Features and Benefits
Features
Low RDSon (≤ 170mΩ)
Low Thermal Resistance to PCB (≤ 19°C/W)
Low Profile (≤ 1.0 mm)
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
results in
Benefits
Lower Conduction Losses
Enable better thermal dissipation
Increased Power Density
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFHS9351TRPBF
IRFHS9351TR2PBF
Package Type
PQFN 2mm x 2mm
PQFN 2mm x 2mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
ID @ TC = 70°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @ TA = 70°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
cContinuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
fPower Dissipation
fPower Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Notes through are on page 2
www.irf.com
Max.
-30
± 20
-2.3
-1.5
d-5.1
d-4.1
d-3.4
-20
1.4
0.9
0.01
-55 to + 150
Note
Units
V
A
W
W/°C
°C
1
7/27/11
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
500
400
ID = -3.1A
IRFHS9351PbF
500
400
300
TJ = 125°C
200
TJ = 25°C
100
0
5 10 15 20 25
-VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
400
300
Vgs = -4.5V
200
Vgs = -10V
100
02468
-ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
300
200
100
0
1E-5
1E-4
1E-3 1E-2
Time (sec)
1E-1
Fig 14. Typical Power vs. Time
1E+0
D.U.T * +
Circuit Layout Considerations
• Low Stray Inductance
-
• Ground Plane
• Low Leakage Inductance
+ Current Transformer
-
- +
RG
• di/dt controlled by RG
• Driver same type as D.U.T.
VDD
+
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
-
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
*VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
IInnductorr CCuurrernetnt
Forward Drop
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
VDD
ISD
Fig 15. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs
www.irf.com
5
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFHS9351PBF.PDF ] | |
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