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PDF 2SB1462 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1462 | |
| Descripción | Silicon PNP Epitaxial Transistor | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SB1462
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SD2216
s Features
q High foward current transfer ratio hFE.
q SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–60
–50
–7
–200
–100
125
125
–55 ~ +125
Unit
V
V
V
mA
mA
mW
˚C
˚C
Unit: mm
1.6±0.15
0.4 0.8±0.1 0.4
1
3
2
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–75
SS-Mini Type Package
Marking symbol : A
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
ICBO
ICEO
VCBO
VCEO
VEBO
hFE*
VCB = –20V, IE = 0
VCE = –10V, IB = 0
IC = –10µA, IE = 0
IC = –100µA, IB = 0
IE = –10µA, IC = 0
VCE = –10V, IC = –2mA
– 0.1 µA
–100 µA
–60 V
–50 V
–7 V
160 460
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
VCE(sat)
fT
Cob
IC = –100mA, IB = –10mA
VCB = –10V, IE = 1mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
– 0.11
80
2.7
– 0.3
V
MHz
pF
*hFE Rank classification
Rank
hFE
Marking Symbol
Q
160 ~ 260
AQ
R
210 ~ 340
AR
S
290 ~ 460
AS
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SB1462.PDF ] | |
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