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PDF FDMS6673BZ Data sheet ( Hoja de datos )
| Número de pieza | FDMS6673BZ | |
| Descripción | P-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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FDMS6673BZ
P-Channel PowerTrench® MOSFET
-30 V, -28 A, 6.8 m:
August 2009
Features
General Description
Max rDS(on) = 6.8 m: at VGS = -10 V, ID = -15.2 A
Max rDS(on) = 12.5 m: at VGS = -4.5 V, ID = -11.2 A
Advanced Package and Silicon combination
for low rDS(on)
HBM ESD protection level of 8 kV typical(note 3)
MSL1 robust package design
RoHS Compliant
The FDMS6673BZ has been designed to minimize losses in load
switch applications. Advancements in both silicon and package
technologies have been combined to offer the lowest rDS(on) and
ESD protection.
Applications
Load Switch in Notebook and Server
Notebook Battery Pack Power Management
Top Bottom
Pin 1
S
S
S
G
D
D
D
D
Power 56
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
Ratings
-30
±25
-28
-90
-15.2
-120
73
2.5
-55 to +150
Units
V
V
A
W
°C
RTJC
RTJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.7
50
°C/W
Device Marking
FDMS6673BZ
Device
FDMS6673BZ
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDMS6673BZ RevC3
1
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
Typical Characteristics TJ = 25 °C unless otherwise noted
2000
1000
100
10
VGS = -10 V
SINGLE PULSE
RTJA = 125 oC/W
TA = 25 oC
1
0.5
10-4
10-3
10-2
10-1
1
10
t, PULSE WIDTH (sec)
Figure 13. Single Pulse Maximum Power Dissipation
100
2
1
0.1
0.01
0.001
0.0004
10-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RTJA = 125 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZTJA x RTJA + TA
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
1000
1000
©2009 Fairchild Semiconductor Corporation
FDMS6673BZ RevC3
5
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDMS6673BZ.PDF ] | |
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