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Número de pieza | 2SB1417A | |
Descripción | Silicon PNP epitaxial planar type(For power amplification) | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SB1417A (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! Power Transistors
2SB1417, 2SB1417A
Silicon PNP epitaxial planar type
For power amplification
Complementary to 2SD2137 and 2SD2137A
s Features
q High forward current transfer ratio hFE which has satisfactory linearity
q Low collector to emitter saturation voltage VCE(sat)
q Allowing automatic insertion with radial taping
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SB1417
base voltage 2SB1417A
Collector to 2SB1417
emitter voltage 2SB1417A
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
–60
–80
–60
–80
–6
–5
–3
15
2.0
150
–55 to +150
V
V
V
A
A
W
˚C
˚C
Unit: mm
10.0±0.2
5.0±0.1
1.0
90°
0.35±0.1
1.2±0.1
0.65±0.1
1.05±0.1
0.55±0.1
C1.0
2.25±0.2
0.55±0.1
C1.0 1 2 3
2.5±0.2
2.5±0.2
1:Base
2:Collector
3:Emitter
MT4 Type Package
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff
2SB1417
current
2SB1417A
Collector cutoff
2SB1417
current
2SB1417A
Emitter cutoff current
Collector to emitter 2SB1417
voltage
2SB1417A
ICES
ICEO
IEBO
VCEO
VCE = –60V, VBE = 0
VCE = –80V, VBE = 0
VCE = –30V, IB = 0
VCE = –60V, IB = 0
VEB = –6V, IC = 0
IC = –30mA, IB = 0
–100
–100
µA
–100
–100
µA
–100 µA
–60
V
–80
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
hFE1*
hFE2
VBE
VCE(sat)
fT
ton
tstg
tf
VCE = –4V, IC = –1A
VCE = –4V, IC = –3A
VCE = –4V, IC = –3A
IC = –3A, IB = – 0.375A
VCE = –5V, IC = – 0.2A, f = 10MHz
IC = –1A, IB1 = – 0.1A, IB2 = 0.1A,
VCC = –50V
70
10
250
–1.8 V
–1.2 V
30 MHz
0.3 µs
1.0 µs
0.2 µs
*hFE1 Rank classification
Rank
Q
P
hFE1 70 to 150 120 to 250
Note: Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the rank classification.
1
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet 2SB1417A.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SB1417 | Silicon PNP epitaxial planar type(For power amplification) | Panasonic Semiconductor |
2SB1417A | Silicon PNP epitaxial planar type(For power amplification) | Panasonic Semiconductor |
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