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PDF 2N4003K Data sheet ( Hoja de datos )
| Número de pieza | 2N4003K | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Weitron Technology | |
| Logotipo |  |
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2N4003K
N-Channel Enhancement
Mode Power MOSFET
P b Lead(Pb)-Free
1
GATE
*
3 DRAIN
* Gate
Features:
* Low Gate Voltage Threshold Vgs(th)
Pretection
Diode
to Facilitate Drive Circuit Design.
* Low Gate Charge for Fast Switching.
* ESD Protected Gate.
* Minimum Breakdown Voltage Rating of 30V.
SOURCE 2
Application:
* Level Shifters
* Level Switches
* Low Side Load Switches
* Portable Applications
DRAIN CURRENT
0.5 AMPERES
DRAIN SOUCE VOLTAGE
30 VOLTAGE
1
2
3
SOT-23
Maximum Ratings(TA=25℃ Unless Otherwise Specified)
Drain-Source Voltage
Rating
Gate-Source Voltage
Continuous Drain Current1 ,Steady State
Power Dissipation1
,Steady State
Continuous Drain Current1 ,t<10s
Power Dissipation1
,t<5s
(TA=25°C)
(TA=85°C)
(TA=25°C)
(TA=85°C)
Pulsed Drain Current
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
Value
30
±20
0.5
0.37
0.69
0.56
0.40
0.83
1.7
Maximum Junction-ambient
Operating Junction Temperature Range
Storage Temperature Range
,Steady State1
,t<10s1
,Steady State2
180
RθJA
150
300
TJ +150
Tstg -55~+150
Source Current (Body Diode)
I S 1.0
Lead Temperature for Soldering Purposes (1/8” from case 10s)
TL 260
Note: 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size.
Unit
V
A
W
A
W
A
°C /W
°C
°C
A
°C
Device Marking
2N4003K = TR8
WEITRON
http://www.weitron.com.tw
1/6
08-Sep-09
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2N4003K
50
40
30
20
10
0
0
TJ = 25°C
VGS = 0 V
Ciss
Coss
Crss
4 8 12 16
DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
20
1
VGS = 0 V
0.1
5
TJ = 25°C
ID = 0.1 A
4
3
2
1
0
0 0.4 0.8 1.2
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate to Source & Drain to Source
Voltage vs. Total Charge
0.01
TJ = 150°C
TJ = 25°C
0.001
0.4
0.6
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
0.8
Figure 9. Diode Forward Voltage vs. Current
WEITRON
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