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PDF 2SB1347 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1347 | |
| Descripción | Silicon PNP triple diffusion planar type(For high power amplification) | |
| Fabricantes | Panasonic Semiconductor | |
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Power Transistors
2SB1347
Silicon PNP triple diffusion planar type
For high power amplification
Complementary to 2SD2029
s Features
q Satisfactory foward current transfer ratio hFE vs. collector cur-
rent IC characteristics
q Wide area of safe operation (ASO)
q High transition frequency fT
q Optimum for the output stage of a HiFi audio amplifier
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
PC
–160
–160
–5
–20
–12
120
3.5
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
IEBO
hFE1
hFE2*
hFE3
VBE
VCE(sat)
fT
Cob
VCB = –160V, IE = 0
VEB = –3V, IC = 0
VCE = –5V, IC = –20mA
VCE = –5V, IC = –1A
VCE = –5V, IC = –8A
VCE = –5V, IC = –8A
IC = –8A, IB = – 0.8A
VCE = –5V, IC = – 0.5A, f = 1MHz
VCB = –10V, IE = 0, f = 1MHz
*hFE2 Rank classification
Rank
Q
S
hFE2 60 to 120 80 to 160
P
100 to 200
20.0±0.5
Unit: mm
φ 3.3±0.2
5.0±0.3
3.0
1.5
2.0±0.3
3.0±0.3
1.0±0.2
5.45±0.3
10.9±0.5
1.5
2.7±0.3
0.6±0.2
123
1:Base
2:Collector
3:Emitter
TOP–3L Package
min typ max Unit
–50 µA
–50 µA
20
60 200
20
–1.8 V
–2.0 V
15 MHz
400 pF
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SB1347.PDF ] | |
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